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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22627


    題名: Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types
    Authors: Cheng-Shong Hong;C. C. Lin;Z. L. Tseng;K. Y. Lo;C. Y. Huang;S. Y. Chu;C. C. Chang;C. J. Wu
    洪群雄
    Date: 2012
    Issue Date: 2014-12-24 13:49:36 (UTC+8)
    關聯: Appl. Phys. Lett., 101 (2012) 203501
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 洪群雄

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