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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22538


    題名: Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types
    Authors: Chih-Yu Huang;C. C. Lin;Z. L. Tseng;K. Y. Lo
    黃智裕
    Date: 2012
    Issue Date: 2014-12-17 10:30:56 (UTC+8)
    關聯: Applied Physics Letters, vol. 101, 203105, Nov., 2012
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 黃智裕

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