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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22469

    題名: Negative-differential-resistorance (NDR) field-effect transistor with n--GaAs/n+-InGaAs/i-GaAs doping-channel structure
    Authors: Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Cheng-Zu Wu;Kong-Beng Thei;Wen-Shiung Lour;Rong-Chau Liu
    Date: 1995
    Issue Date: 2014-12-09 10:15:20 (UTC+8)
    關聯: International Laser, Lightwave and Microwave Conference, pp.54-57, Shanghai, China
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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