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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22462

    題名: Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet
    Authors: Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen
    Date: 1996
    Issue Date: 2014-12-09 10:15:11 (UTC+8)
    關聯: Europen Gallium Arsenide and Related III-V Compounds Applications Symposium GAAS’96, Paris, France, 1996
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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