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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22409

    題名: Characteristics of a heterostructure field-effect transistor (HFET) with sulfur passivation on gate surface
    Authors: Jung-Hui Tsai;P. H. Lai;S. I. Fu;Y. Y. Tsai;C. W. Hung;W. C. Liu
    Date: 2006
    Issue Date: 2014-12-09 10:13:58 (UTC+8)
    關聯: International conference on processing & manufacturing of advanced materials (THERMEC’2006), pp. 481, Vancouver, Canada, 2006
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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