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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22400

    題名: Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT
    Authors: Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng
    Date: 2007
    Issue Date: 2014-12-09 10:13:45 (UTC+8)
    關聯: 2nd International Symposium on Functional Materials (ISFM-2007), p. 94, Hangzhou, China, 2007. [EI]
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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