English  |  正體中文  |  简体中文  |  Items with full text/Total items : 16335/24215 (67%)
Visitors : 12495768      Online Users : 575
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22387

    題名: Application of Schottky bulk-layer design on double-heterojunction pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistors (DH-HEMTs)
    Authors: Jung-Hui Tsai;Meng-Kai Hsu;Shao-Yen Chiu;Chung-Hsien Wu;Kum-Chieh Liang;Kang-Ping Liu;Tze-Shuan Huang;Wen-Shiung Lour
    Date: 2008
    Issue Date: 2014-12-09 10:13:28 (UTC+8)
    關聯: International conference on multi-functional materials and structures,Vol.47-50, pp. 416-422, 2008. [EI]
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

    Files in This Item:

    There are no files associated with this item.

    All items in NKNUIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback