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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22361

    題名: Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch
    Authors: Jung-Hui Tsai;Der-Feng Guo;Lih-Wen Laih;Wen-Chau Liu;Wen-Chau Liu
    Date: 1995
    Issue Date: 2014-11-24 13:49:39 (UTC+8)
    Abstract: A switching device, with a p‐type delta‐doped sheet in the center of an InGaAs‐GaAs quantum well, has been fabricated and demonstrated. An N‐shaped negative‐differential‐resistance phenomenon resulting from the resonant‐tunneling effect through the miniband is observed in the current‐voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak‐current voltage, valley‐current voltage, peak‐current density, and valley‐current density are studied and discussed.
    關聯: Journal of Applied Physics / Vol.77, No.6, pp.2782-2785, 1995. [SCI, EI], http://dx.doi.org/10.1063/1.358748
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

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