English  |  正體中文  |  简体中文  |  Items with full text/Total items : 16335/24215 (67%)
Visitors : 11035708      Online Users : 97
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22361


    題名: Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch
    Authors: Jung-Hui Tsai;Der-Feng Guo;Lih-Wen Laih;Wen-Chau Liu;Wen-Chau Liu
    蔡榮輝
    Date: 1995
    Issue Date: 2014-11-24 13:49:39 (UTC+8)
    Abstract: A switching device, with a p‐type delta‐doped sheet in the center of an InGaAs‐GaAs quantum well, has been fabricated and demonstrated. An N‐shaped negative‐differential‐resistance phenomenon resulting from the resonant‐tunneling effect through the miniband is observed in the current‐voltage measurement. From the experimental results, it is seen that the temperature plays an important role in device operation. The influences of temperature upon the peak‐current voltage, valley‐current voltage, peak‐current density, and valley‐current density are studied and discussed.
    關聯: Journal of Applied Physics / Vol.77, No.6, pp.2782-2785, 1995. [SCI, EI], http://dx.doi.org/10.1063/1.358748
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

    Files in This Item:

    File SizeFormat
    index.html0KbHTML489View/Open


    All items in NKNUIR are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback