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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22353

    題名: Characteristics of camel-gate structures with active doping channel profiles
    Authors: Jung-Hui Tsai;Wen-Shiung Lour;Lih-Wen Laih;Rong-Chau Liu;Wen-Chau Liu
    Date: 1996-03
    Issue Date: 2014-11-24 13:49:29 (UTC+8)
    Abstract: In this paper, we demonstrate the influence of channel doping profile on the performances of camel-gate field effect transistors (CAMFETs). For comparison, single and tri-step doping channel structures with identical doping thickness products are employed, while other parameters are kept unchanged. The results of a theoretical analysis show that the single doping channel FET with lightly doping active layer has higher barrier height and drain-source saturation current. However, the transconductance is decreased. For a tri-step doping channel structure, it is found that the output drain-source saturation current and the barrier height are enhanced. Furthermore, the relatively voltage independent performances are improved. Two CAMFETs with single and tri-step doping channel structures have been fabricated and discussed. The devices exhibit nearly voltage independent transconductances of 144 mS mm−1 and 222 mS mm−1 for single and tri-step doping channel CAMFETs, respectively. The operation gate voltage may extend to ± 1.5 V for a tri-step doping channel CAMFET. In addition, the drain current densities of > 750 and 405 mA mm−1 are obtained for the tri-step and single doping CAMFETs. These experimental results are inconsistent with theoretical analysis.
    關聯: Solid-State Electronics / Volume 39, Issue 3, March 1996, Pages 343–347, doi:10.1016/0038-1101(95)00141-7

    [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
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