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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22322

    題名: Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor
    Authors: Jung-Hui Tsai
    Keywords: InGaP/GaAs;Co-integrated;δ-Doped heterojunction bipolar transistor;Doped-channel field effect transistor;Offset voltage;Transconductance
    Date: 2002-01
    Issue Date: 2014-11-24 10:25:26 (UTC+8)
    Abstract: In this paper, novel InGaP/GaAs co-integrated structures consisting of a δ-doped heterojunction bipolar transistor (δ-HBT) and a doped-channel field effect transistor (DCFET) will be fabricated and demonstrated. For the δ-HBT, the confinement effect for holes is increased and the potential spike at emitter–base heterojunction can be reduced significantly owing to the presence of δ-doped sheet at InGaP/GaAs junction. High current gain of 490 and collector–emitter offset voltage smaller than 40 mV are achieved, when a proper emitter-edge thinning design is employed. On the other hand, for a 1×100 μm2 DCFET, an undoped InGaP gate layer is used to increase gate breakdown voltage, and a thin and heavy-doped GaAs channel enhances current drivability and transconductance linearity. A high gate breakdown voltage of 35 V, a maximum drain saturation current of 780 mA, a maximum transconductance of 235 mS/mm, and a wide gate voltage range larger 3 V with the transconductance larger 150 mS/mm are obtained. Consequently, the studied co-integrated devices show a promise for circuit applications.
    關聯: Solid-State Electronics / Vol.46, No.1, pp.45-48, 2002. [SCI, EI], doi:10.1016/S0038-1101(01)00272-6
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