English  |  正體中文  |  简体中文  |  Items with full text/Total items : 16335/24215 (67%)
Visitors : 11055788      Online Users : 61
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22322


    題名: Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor
    Authors: Jung-Hui Tsai
    蔡榮輝
    Keywords: InGaP/GaAs;Co-integrated;δ-Doped heterojunction bipolar transistor;Doped-channel field effect transistor;Offset voltage;Transconductance
    Date: 2002-01
    Issue Date: 2014-11-24 10:25:26 (UTC+8)
    Abstract: In this paper, novel InGaP/GaAs co-integrated structures consisting of a δ-doped heterojunction bipolar transistor (δ-HBT) and a doped-channel field effect transistor (DCFET) will be fabricated and demonstrated. For the δ-HBT, the confinement effect for holes is increased and the potential spike at emitter–base heterojunction can be reduced significantly owing to the presence of δ-doped sheet at InGaP/GaAs junction. High current gain of 490 and collector–emitter offset voltage smaller than 40 mV are achieved, when a proper emitter-edge thinning design is employed. On the other hand, for a 1×100 μm2 DCFET, an undoped InGaP gate layer is used to increase gate breakdown voltage, and a thin and heavy-doped GaAs channel enhances current drivability and transconductance linearity. A high gate breakdown voltage of 35 V, a maximum drain saturation current of 780 mA, a maximum transconductance of 235 mS/mm, and a wide gate voltage range larger 3 V with the transconductance larger 150 mS/mm are obtained. Consequently, the studied co-integrated devices show a promise for circuit applications.
    關聯: Solid-State Electronics / Vol.46, No.1, pp.45-48, 2002. [SCI, EI], doi:10.1016/S0038-1101(01)00272-6
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

    Files in This Item:

    File SizeFormat
    index.html0KbHTML518View/Open


    All items in NKNUIR are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback