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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22312

    題名: Design consideration of δ-doping channels for high-performance n+-GaAs/p+-InGaP/n-GaAs camel-gate field effect transistors
    Authors: Jung-Hui Tsai;Jeng-Shyan Chen;Yu-Jui Chu
    Date: 2005
    Issue Date: 2014-11-24 10:25:11 (UTC+8)
    關聯: Superlattices & Microstructures, Vol. 37, No.1, pp. 9-17, 2005. [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

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