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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22299

    題名: Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate
    Authors: Jung-Hui Tsai;Meng-Kai Hsu;Hon-Rung Chen;Shao-Yen Chiu;Wei-Tien Chen;Wen-Chau Liu;Wen-Shiung Lour
    Date: 2007
    Issue Date: 2014-11-24 10:24:53 (UTC+8)
    關聯: Semiconductor Science and Technology, Vol. 22, No. 2, pp. 35-42, 2007. [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

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