English  |  正體中文  |  简体中文  |  Items with full text/Total items : 16335/24215 (67%)
Visitors : 13497851      Online Users : 472
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22296

    題名: Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector
    Authors: Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu
    Keywords: semiconductor heterojunctions;optoelectronic devices;semiconductor switches;electrical resistivity
    Date: 2007
    Issue Date: 2014-11-24 10:24:49 (UTC+8)
    Abstract: In order to achieve high optical sensitivity and low holding power, a wide-gap carrier confinement layer was introduced into the collector region of an n-p-n-heterostructure optoelectronic switch. A similar device without the confinement layer was also fabricated to demonstrate the performance improvement. Both devices were found to have bistable electrical states: a high-impedance OFF state connected to a low-impedance ON state by a region of negative differential resistance. The functional characteristics were based on avalanche multiplication.
    關聯: J. Electrochemical Society / Vol.154, No.1, pp.H13-H15, 2007. [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

    Files in This Item:

    File SizeFormat

    All items in NKNUIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback