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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22291

    題名: Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)
    Authors: Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng
    Date: 2008
    Issue Date: 2014-11-24 10:24:42 (UTC+8)
    關聯: Physica Scripta, T129, pp. 293-296, 2007. [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

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