English  |  正體中文  |  简体中文  |  Items with full text/Total items : 16335/24215 (67%)
Visitors : 11499202      Online Users : 165
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22285


    題名: Comparison of heterstructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures
    Authors: Jung-Hui Tsai;I-Hsuan Hsu;Chien-Ming Li;Ning-Xing Su;Yi-Zhen Wu;Yin-Shan Huang
    蔡榮輝
    Date: 2008
    Issue Date: 2014-11-24 10:24:33 (UTC+8)
    關聯: Solid-State Electron., Vol. 52, No. 7, pp. 1018-1023, 2008. [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

    Files in This Item:

    There are no files associated with this item.



    All items in NKNUIR are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback