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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22257

    題名: Comparative Study of InGaP/GaAs High Electron Mobility Transistors with Upper and Lower Delta-Doped Supplied Layers
    Authors: Jung-Hui Tsai;Sheng-Shiun Ye;Der-Feng Guo;Wen-Shiung Lour
    Date: 2012-04
    Issue Date: 2014-11-24 10:23:54 (UTC+8)
    關聯: Semiconductors, Vol.46, No. 4, pp. 514-518, 2012. [SCI, EI]
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

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