高師機構典藏 NKNUIR:Item 987654321/22097
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    題名: AlxGa1_xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
    作者: Ruey-Lue Wang;W. S. Chen;S. J. Chang;Y. K. Su;R. L. Wang;C. H. Kuo;S. C. Shei
    王瑞祿
    关键词: AlGaN/GaN;Mg-doped layer;Al composition;HFET
    日期: 2005-03-01
    上传时间: 2014-11-14 18:05:32 (UTC+8)
    摘要: AlxGa1−xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped AlxGa1−xN spacer layer and a 14-nm-thick Si-doped AlxGa1−xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation IDS were 207, 270, 430, and 355 mA/mm while the maximum gm were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.
    關聯: Journal of Crystal Growth / Volume 275, Issues 3–4, Pages398–403
    显示于类别:[電子工程學系] 期刊論文
    [電子系] 王瑞祿

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