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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22097


    題名: AlxGa1_xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
    Authors: Ruey-Lue Wang;W. S. Chen;S. J. Chang;Y. K. Su;R. L. Wang;C. H. Kuo;S. C. Shei
    王瑞祿
    Keywords: AlGaN/GaN;Mg-doped layer;Al composition;HFET
    Date: 2005-03-01
    Issue Date: 2014-11-14 18:05:32 (UTC+8)
    Abstract: AlxGa1−xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped AlxGa1−xN spacer layer and a 14-nm-thick Si-doped AlxGa1−xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-μm-gate length, the measured saturation IDS were 207, 270, 430, and 355 mA/mm while the maximum gm were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively.
    關聯: Journal of Crystal Growth / Volume 275, Issues 3–4, Pages398–403
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 王瑞祿

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