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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22091


    題名: DC and RF Degradation Induced by High RF Power Stresses in 0.18μm nMOSFETs
    Authors: Ruey-Lue Wang;Chien-Hsuan Liu;Yan-Kuin Su;Chih-Ho Tu;Ying-Zong Juang
    王瑞祿
    Date: 2010
    Issue Date: 2014-11-14 18:05:25 (UTC+8)
    關聯: has been accepted by IEEE Transactions on Device and Materials Reliability, Vol.10, Issue 3, pp.317-323, 2010.(SCI)
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 王瑞祿

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