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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/21911

    題名: Charge Trapping Memory Stack with Aluminum Oxide as the Tunnel Barrier
    Authors: J.F Yang;X.W. (Sharon) Wang;Y.L. Yang;T.P. Ma
    Date: 2008-12
    Issue Date: 2014-11-03 15:41:21 (UTC+8)
    關聯: IEEE Semiconductor Interface Specialists Conference, Catamaran Resort Hotel, San Diego CA, USA, Dec. 2008
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 楊宜霖

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