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    Showing items 1-21 of 21. (1 Page(s) Totally)
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    Date題名Authors
    2008-12 Charge Trapping Memory Stack with Aluminum Oxide as the Tunnel Barrier J.F Yang; X.W. (Sharon) Wang; Y.L. Yang; T.P. Ma; 楊宜霖
    2008-09 Effect of Strain-Temperature Stress on MOS Structure with Ultra-thin Gate Oxide C.N. Lin; Y.L. Yang; W.T. Chen; S.C. Lin; K.C. Chuang; J.G. Hwu; 楊宜霖
    2004-09 Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides W.J. Liao; Y.L. Yang; S.C. Chuang; J.G. Hwu; 楊宜霖
    2006-12 Hydrogen Eraser for Tightening VT Distribution of Nitride Trapping Memory Y.L. Yang; C.H. Chang; Y.H. Shih; K.Y. Hsieh; J.G. Hwu; 楊宜霖
    2006-07 Impact of Strain-Temperature Stress on Ultrathin Oxide C.W. Tung, Y.L. Yang and J.G. Hwu; 楊宜霖
    2011-04 The Improvement of Reliability of 28nm High-k/Metal Gate Device with Various PMA Conditions Chi-Yun Cheng; Wen-Kuan Yeh; Yi-Lin Yang; Chia-Wei Hsu; 楊宜霖
    2012 The Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions Yi-Lin Yang; Wenqi Zhang; Chi-Yun Cheng; Wen-Kuan Yeh; 楊宜霖
    2009-12 Inelastic Electron Tunneling Spectroscopy Study of Ultra-Thin TiO2/Al2O3 on GaAs Z. Liu; X.W. (Sharon) Wang; W. Zhang; Y.L. Yang; T.P. Ma; 楊宜霖
    2007-12 Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides C.N. Lin; Y.L. Yang; W.T. Chen; S.C. Lin; J.G. Hwu; 楊宜霖
    2007-06 Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory Y.L. Yang; C.H. Chang; Y.H. Shih; K.Y. Hsieh; J.G. Hwu; 楊宜霖
    2011-10 A Proposed High Manufacturability Strain Technology for High-k/Metal Gate SiGe-SOI CMOSFET W.K. Yeh; C.Y. Cheng; Y.L Yang; C.T. Lin; C.M. Lai; Y.W. Chen; C. H. Hsu; C.W. Yang; P.Y. Chen; 楊宜霖
    2004-10 Quality Improvement of Ultra-Thin Gate Oxide by Using Thermal-Growth Followed by Scanning-Frequency Anodization (SF ANO) Technique Y.L. Yang; J.G. Hwu; 楊宜霖
    2011-11 Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing Y.L. Yang; Y.P. Huang; P.T. Chen; W.Q. Zhang; C.Y. Cheng; L.K. Chin; C.W. Hsu; W.K. Yeh; 楊宜霖
    2012-06 Reliability Improvement of 28nm High-k/Metal Gate Device by Using Oxygen Annealing Yi-Lin Yang; Wenqi Zhang; Chi-Yun Cheng; Yi-Ping Huang; Pin-Tseng Chen; Li-Kong Chin; Chia-Wei Hsu; Wen-Kuan Yeh; 楊宜霖
    2012-08 Reliability Improvement of 28nm High-k/Metal Gate-Last MOSFET using Appropriate Oxygen Annealing Yi-Lin Yang; Wenqi Zhang; Chi-Yun Cheng; Yi-Ping Huang; Pin-Tseng Chen; Chia-Wei Hsu; Li-Kong Chin; Chien-Ting Lin; Che-Hua Hsu; Chien-Ming Lai; Wen-Kuan Yeh; 楊宜霖
    2015-08 具不同摻雜濃度之超薄絕緣層上矽晶及超薄底絕緣層金氧半場效電晶體閘極絕緣層可靠度之分析與探討 楊宜霖
    2014-07-14 對N型和P型鰭式場效應電晶體特性和可靠度之研究 嚴子松; Tzu-Sung Yen
    2013-08-11 通道摻雜濃度對超薄絕緣層上矽金氧半場效電晶體元件可靠度之研究 王士豪; Shi-Hao Wang
    2011-08 電阻式記憶體之低能耗製程技術開發(I) 楊宜霖
    2013-08 電阻式記憶體之低能耗製程技術開發(II) 楊宜霖
    2014-08 非平面結構金氧半場效電晶體閘極絕緣層可靠度之分析與探討 楊宜霖

    Showing items 1-21 of 21. (1 Page(s) Totally)
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