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    顯示項目1-25 / 273. (共11頁)
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    日期題名作者
    2006 An AlGaAs/GaAs/InAlGaP optoelectronic switch Jung-Hui Tsai; Tzu-Yen Weng; Der-Feng Guo; 蔡榮輝
    1998 AlGaAs/GaAs/InGaAs Resonant Tunneling Bipolar Transistor with Untrathin Base Layer Jung-Hui Tsai; 蔡榮輝
    1996 AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT) Jung-Hui Tsai; Shiou-Ying Cheng; Lih-Wen Laih; Wen-Chau Liu; 蔡榮輝
    1996-06 Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n--GaAs/n+-In0.2Ga0.8As/i-GaAs structure Jung-Hui Tsai; Lih-Wen Laih; Wen-Chau Liu; Wei-Chou Hsu; Yuan-Tzu Ting; Rong-Chau Liu; 蔡榮輝
    2006 Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag Jung-Hui Tsai; Shao-Yen Chiu; Wen-Shiung Lour; Der-Feng Guo; Wen-Chau Liu; 蔡榮輝
    1995 Application of InGaAs-GaAs delta-doped quantum wells to bolk-barrier switching devices Jung-Hui Tsai; Der-Feng Guo; Lih-Wen Laih; Wen-Chau Liu; 蔡榮輝
    2010 Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor Jung-Hui Tsai; Yuan-Hong Lee; Ning-Feng DaleJhih-Syuan ShengYung-Chun MaSheng-Shiun Ye; 蔡榮輝
    2005 Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch Jung-Hui Tsai; Ying-Cheng Chu; Shao-Yen Chiu; King-Poul Zhu; Yu-Jui Chu; Jeng-Shyan Chen; 蔡榮輝
    2013 Application of p+-InGaP/n+-GaAs/i-InGaAs Camel-Like Gate for Delta-Doped p-Channel Field-Effect Transistor Jung-Hui Tsai; Yi-Ting Chao; Chung-Cheng Chiang; You-Ren Wu; Ning-Feng Dale; Yuan-Hong Lee; 蔡榮輝
    2008 Application of Schottky bulk-layer design on double-heterojunction pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistors (DH-HEMTs) Jung-Hui Tsai; Meng-Kai Hsu; Shao-Yen Chiu; Chung-Hsien Wu; Kum-Chieh Liang; Kang-Ping Liu; Tze-Shuan Huang; Wen-Shiung Lour; 蔡榮輝
    2007 Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT Jung-Hui Tsai; Der-Feng Guo; Yu-Chi Kang; Tzu-Yen Weng; 蔡榮輝
    2008 Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT) Jung-Hui Tsai; Der-Feng Guo; Yu-Chi Kang; Tzu-Yen Weng; 蔡榮輝
    2007 Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector Jung-Hui Tsai; Der-Feng Guo; Chih-Hung Yen; Wen-Shiung Lour; Wen-Chau Liu; 蔡榮輝
    1995 Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch Jung-Hui Tsai; Der-Feng Guo; Lih-Wen Laih; Wen-Chau Liu; Wen-Chau Liu; 蔡榮輝
    2006 Characteristics of a heterostructure field-effect transistor (HFET) with sulfur passivation on gate surface Jung-Hui Tsai; P. H. Lai; S. I. Fu; Y. Y. Tsai; C. W. Hung; W. C. Liu; 蔡榮輝
    1996-03 Characteristics of camel-gate structures with active doping channel profiles Jung-Hui Tsai; Wen-Shiung Lour; Lih-Wen Laih; Rong-Chau Liu; Wen-Chau Liu; 蔡榮輝
    1996 Characteristics of functional heterostructure-emitter bipolar transistors (HEBT's) Jung-Hui Tsai; Kong-Beng Thei; Wen-Chau Liu; Wen-Shiung Lour; 蔡榮輝
    2002-01 Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor Jung-Hui Tsai; 蔡榮輝
    1996 Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet Jung-Hui Tsai; Wen-Shiung Lour; Wen-Chau Liu; H. R. Chen; 蔡榮輝
    2008 Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs Jung-Hui Tsai; Chien-Ming Li; 蔡榮輝
    2007 Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate Jung-Hui Tsai; Meng-Kai Hsu; Hon-Rung Chen; Shao-Yen Chiu; Wei-Tien Chen; Wen-Chau Liu; Wen-Shiung Lour; 蔡榮輝
    1995-01 Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8As/GaAs doped-channel structure Jung-Hui Tsai; Lih-Wen Laih; Wen-Shiung Lour; Wen-Chau Liu; Cheng-Zu Wu; Kong-Beng Thei; Rong-Chau Liu; 蔡榮輝
    2001 Co-Integration of d-Doped Heterojunction Bipolar Transistor and Doped-Channel Field Effect Transistor Jung-Hui Tsai; 蔡榮輝
    2011 Comparative investigation of InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles Jung-Hui Tsai; Der-Feng Guo; Wen-Shiung Lour; 蔡榮輝
    2012-12 Comparative Investigation of InP/InGaAs Abrupt, Setback, and Heterostructure-Emitter Heterojunction Bipolar Transistors Jung-Hui Tsai; Chia-Hong Huang; Yung-Chun Ma; You-Ren Wu; 蔡榮輝; 黃嘉宏

    顯示項目1-25 / 273. (共11頁)
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