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    題名: ZnO/c-Si異質接面太陽能電池之特性分析
    Analysis of ZnO/c-Si Heterojunction Solar Cells
    作者: 黃嘉宏;劉奕辰
    Chia-Hong Huang
    貢獻者: 光電與通訊工程學系
    关键词: 氧化鋅;結晶矽;異質接面太陽能電池
    Zinc oxide;crystalline silicon;heterojunction solar cells
    日期: 2013-06-01
    上传时间: 2014-01-29 15:36:33 (UTC+8)
    摘要: 在本研究中,我們以模擬軟體SILVACO對n型氧化鋅(ZnO)/p型結晶矽(c-Si)異質接面(heterojunction)太陽能電池特性進行模擬與分析。在此結構中,我們分別探討氧化鋅摻雜濃度,在1.6×10^14 cm^(-3)到1×10^19 cm^(-3)的濃度下,我們改變氧化鋅的厚度,從1μm提升至10μm。最後由模擬分析得知,在摻雜濃度1×10^19 cm^(-3)與氧化鋅厚度在10μm的時候效率最佳,因為提升摻雜濃度,會導致空乏區內建電場增加,因而提升厚度,增加太陽能電池的光吸收區域,使得產生更多的電子電洞對。在AM1.5太陽光模擬光源照射(100mW/cm^2)下,最佳的模擬結果:開路電壓(open-circuit voltage)為0.5388V、短路電流密度(short-circuit current density)為55.37mA/cm^2、填充因子(fill factor)為0.788、及轉換效率(conversion efficiency)為23.5%等特性。
    In this study, the performance of n-ZnO/p-Si heterojunction solar cells is simulated by SILVACO. The effect of the doping concentration and thickness of zinc oxide (ZnO) on the characteristics of n-ZnO/p-Si heterojunction solar cells is investigated. From the simulation results, the conversion efficiency increases with the increase in the doping concentration. It is because the high doping concentration leads to the high built-in electric field in the depletion region, so that the higher built-in electric field sweeps out more electrons and holes. Furthermore, the conversion efficiency is also raised with the increase in the thickness of ZnO. While increasing the thickness, a light absorption region of the solar cell will expand, generating more electron-hole pairs under illumination. It is observed that the open-circuit voltage (Voc) of 0.5388 V, the short-circuit current density (Jsc) of 55.37 mA/cm^2, the fill factor (FF) of 0.788 and the conversion efficiency (η) of 23.5% were obtained by using AM1.5 illumination (100 mW/cm^2).
    關聯: 高雄師大學報 / 34期_3, 頁75-94
    显示于类别:[高雄師大學報] 第34期
    [光電與通訊工程學系] 期刊論文
    [電子系] 黃嘉宏

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