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    顯示項目351-375 / 805. (共33頁)
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    日期題名作者
    2007 Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs Jung-Hui Tsai; Chien-Ming Li; Wen-Chau Liu; Der-Feng Guo; Shao-Yen Chiu; Wen-Shiung Lour; 蔡榮輝
    2011 Internal WLAN antenna for wireless USB dongle applications Chih-Yu Huang; C. C. Lin; A. T. Yu; J. H. Tsai; 黃智裕
    2010 Investigating the Curie-Weiss Deviation and the Local order Behavior of 0.75PFW-0.25PT Relaxors Prepared by two Different Methods Cheng-Shong Hong; S. Y. Chu; W. C. Su; 洪群雄
    2011 Investigating the physical meanings of diffused phase transition models Cheng-Shong Hong; S. Y. Chu; C. C. Tsai; W. C. Su; 洪群雄
    2010 Investigation in heterostructural optoelectronic devices Jung-Hui Tsai; Der-Feng Guo; 蔡榮輝
    2007 An investigation of (Na0.5K0.5)NbO3–CaTiO3 based lead-free ceramics and surface acoustic wave devices Cheng-Shong Hong; R. C. Chang; S. Y. Chu; Y. F. Lin; Y. P. Wong; 洪群雄
    2000 Investigation of AlGaAs/GaAs/InGaAs Resonant-Tunneling Base Transistor (RTBT) Jung-Hui Tsai; 蔡榮輝
    1997 Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors Jung-Hui Tsai; Wen-Shiung Lour; Hui-Jung Shih; Wen-Chau Liu; Hao-Hsiung Lin; 蔡榮輝
    1998 Investigation of AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT) Jung-Hui Tsai; Po-Hung Lin; Shiou-Ying Cheng; Wen-Lung Chang; Hsi-Jen Pan; Yung-Hsin Shie; Wen-Chau Liu; 蔡榮輝
    2007 Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors Jung-Hui Tsai; Der-Feng Guo; Chih-Hung Yen; Wen-Shiung Lour; Wen-Chau Liu; 蔡榮輝
    1999 Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT) Jung-Hui Tsai; Shiou-Ying Cheng; Wen-Lung Chang; Hsi-Jen Pan; Yung-Hsin Shie; Wen-Chau Liu; 蔡榮輝
    2006 Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor Jung-Hui Tsai; Der-Feng Guo; Tzu-Yen Weng; Ching-Han Wu; 蔡榮輝
    2003-11 Investigation of Copper Process by Using PVD Ruey-Lue Wang; Ming-Chang Kuo; Yan-Kuin Su; Sun-Chin Wei; Shih-Chieh Hung; Kuo-Chun Huang; 王瑞祿
    2012 Investigation of CuO-doped NKN ceramics with high mechanical quality factor synthesized by a B-site oxide precursor method Cheng-Shong Hong; S. L. Yang; C. C. Tsai; Y. C. Liou; C. S. Hong; B. J. Li; S. Y. Chu; 洪群雄
    2008 Investigation of field-plate gate on heterojunction doped-channel field effect transistors Jung-Hui Tsai; Meng-Kai Hsu; Shao-Yen Chiu; Chung-Hsien Wu; Kang-Ping Liu; Wen-Shiung Lour; 蔡榮輝
    1998 Investigation of GaAs-based heterostructure-emitter-confinement bipolar transistors (HECBT's) Jung-Hui Tsai; Wen-Chau Liu; Shiou-Ying Cheng; W. L. Chang; 蔡榮輝
    1994 Investigation of InGaAs/GaAs doped-channel MIS-like pseudomorphic transistor Jung-Hui Tsai; Wen-Chau Liu; Wei-Chou Hsu; Lih-Wen Laih; Wen-Shiung Lour; 蔡榮輝
    2004 Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches Jung-Hui Tsai; Yu-Jui Chu; Jeng-Shyan Chen; King-Poul Zhu; 蔡榮輝
    1996 Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD Jung-Hui Tsai; Wen-Chau Liu; Kong-Beng Thei; Chin-Chuan Cheng; Kun-Wei Lin; H. R. Chen,; 蔡榮輝
    2010 Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor Jung-Hui Tsai; Wen-Shiung Lour; Chia-Hong Huang; Ning-Feng Dale; Yuan-Hong Lee; Jhih-Syuan Sheng; Wen-Chau Liu; 黃嘉宏
    2008 Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages Jung-Hui Tsai; Tzu-Yen Wen; King-Poul Zhu; 蔡榮輝
    2012 Investigation of InGaP/InGaAs Pseudomorphic Triple Doped-Channel Field-Effect Transistors Jung-Hui Tsai; Jia-Cing Jhou; Jhih-Jhong Ou-Yang; 蔡榮輝
    2008 Investigation of InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure Jung-Hui Tsai; T. P. Chen; W. H. Chen; K. Y. Chu; L. Y. Chen; C. J. Lee; S. Y. Cheng; W. C. Liu; 蔡榮輝
    2004 Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD Jung-Hui Tsai; Ying-Cheng Chu; King-Poul Zhu; Shao-Yen Chiu; 蔡榮輝
    2006 Investigation of InP/InGaAs pnp d-doped heterojunction bipolar transistor with extremely low offset voltage Jung-Hui Tsai; Yu-Chi Kang; I-Hsuan Hsu; Tzu-Yen Weng; 蔡榮輝

    顯示項目351-375 / 805. (共33頁)
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