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    Showing items 376-400 of 805. (33 Page(s) Totally)
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    Date題名Authors
    2006 Investigation of InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor Jung-Hui Tsai; Yu-Chi Kang; I-Hsuan Hsu; Tzu-Yen Weng; 蔡榮輝
    2004 Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor Jung-Hui Tsai; King-Poul Zhu; Ying-Cheng Chu; Shao-Yen Chiu; 蔡榮輝
    2006 Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions Jung-Hui Tsai; Yu-Chi Kang; I-Hsuan Hsu; Tzu-Yen Wen; 蔡榮輝
    2003 Investigation of InP/InGaAs superlattice-emitter heterojunction bipolar transistor (HBT) Jung-Hui Tsai; King-Poul Zhu; Ying-Cheng Chu; Shao-Yen Chiu; 蔡榮輝
    2003 Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature Jung-Hui Tsai; King-Poul Zhu; 蔡榮輝
    2008 An investigation of Love wave devices based on ZnO:Mg/LiNbO3 structure Cheng-Shong Hong; R. C. Chang; S. Y. Chu; P. W. Yeh; C. S. Hong; H. H. Huang; 洪群雄
    2003 Investigation of Low-Frequency Noise of GaN-Based Hetrostructure Field-Effect Transistors Ruey-Lue Wang; S. C. Wey; Y. K. Su; T. M. Kuan; R. L. Wang; S. J. Chang; C. H. Ko; 王瑞祿
    2006 An investigation of preferred orientation of doped ZnO films on the 36? YX-LiTaO3 substrates and fabrications of Love-mode devices Cheng-Shong Hong; R. C. Chang; S. Y. Chu; Y. T. Chuang; 洪群雄
    1999 Investigation of Resonant Tunneling Bipolar Transistor with Bi-directional Negative-Differential-Resistance Phenomena Jung-Hui Tsai; 蔡榮輝
    1996 Investigation of step doped channel heterostructure field-effect transistor Jung-Hui Tsai; Wen-Chau Liu; Lih-Wen Laih; Jing-Yuh Chen; Wei-Chou Wang; Po-Hung Lin; 蔡榮輝
    1997 Investigation of step-doped channel heterostructure field-effect transistor Jung-Hui Tsai; Lih-Wen Laih; Cheng-Zu Wu; Shiou-Ying Cheng; Wen-Chau Liu; 蔡榮輝
    2007-12 Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides C.N. Lin; Y.L. Yang; W.T. Chen; S.C. Lin; J.G. Hwu; 楊宜霖
    2008 Investigation of the dielectric properties of MnO-additive Pb(Fe2/3W1/3)-PbTiO3 relaxors prepared by two different methods Cheng-Shong Hong; S. Y. Chu; W. C. Su; R. C. Chang; H. H. Nien; Y. D. Juang; 洪群雄
    2008 Investigation of the dielectric properties of MnO-additive Pb(Fe2/3W1/3)-PbTiO3 relaxors using the spin-glass model Cheng-Shong Hong; S. Y. Chu; B. J. Li; W. C. Su; R. C. Chang; H. H. Nien; Y. D. Juang; 洪群雄
    2008 Investigation on electro-optical switch using heterojunction phototransistors with double emitter Jung-Hui Tsai; Shao-Yen Chiu; Chung-Hsien Wu; Wen-Shiung Lou; 蔡榮輝
    2008 Investigation on heterostructural optoelectronic switches Jung-Hui Tsai; Der-Feng Guo; Tzu-Yen Weng; Chih-Hung Yeng; Po-Hsien Lai; Ssu-Yi Fu; Ching-Wen Hung; Wen-Chau Liu; 蔡榮輝
    2007 Investigation on heterostructural optoelectronic switches Jung-Hui Tsai; Der-Feng Guo; Tzu-Yen Weng; Chih-Hung Yeng; Po-Hsien Lai; Ssu-Yi Fu; Ching-Wen Hung; Wen-Chau Liu; 蔡榮輝
    2008-08 Ion-Sensitive Field-Effect Transistor and Signal Processing circuit for Creatinine Detection Ruey-Lue Wang; Min-Chuan Lin; Jia-Yu Guo; Hung-Yin Lin; Tian-Jun Tsai; Chen-Fu Lin; Hann-Huei Tsai; Ying-Zong Juang; 王瑞祿
    2013-12 ISFET with Built-in Gold Electrode and Readout Circuit with Frequency-Adjustable Pulse Output Ruey-Lue Wang; Hsin-Hao Liao; Hann-Huei Tsai; Ying-Zong Juang; Chien-Cheng Fu; Chi Yu; 王瑞祿
    2005-12 Iterative ISI cancellation for DMT-based VDSL systems Sun-Ting Lin; C. H. Wei; 林尚亭
    2011 Lanthanum Dopant Induced Transition from the Ferroelectric to the Relaxor State in 0.7PFW-0.3PT Ceramics Cheng-Shong Hong; S. Y. Chu; C. C. Hsu; 洪群雄
    2010 The Layout Geometry and Power-level Dependences of Degradation in CMOS RF Power Cells from Hot-carrier Stress with Load Pull System Ruey-Lue Wang; Chien-Hsuan Liu; Yan-Kuin Su; Chih-Ho To; Ying-Zong Juang; 王瑞祿
    2010 The Layout Geometry Dependence of the Power Cells on Performances and Reliability Ruey-Lue Wang; Chien-Hsuan Liu; Yan-Kuin Su; Chih-Ho Tu; Ying-Zong Juang; 王瑞祿
    2002-12 Leakage Current Improvement of AlGaN/GaN HFETs by High Resistive Mg-Doped GaN Layer Ruey-Lue Wang; S. C. Wei; Y. K. Su; S. J. Chang; R. L. Wang; T. H. Hsu; 王瑞祿
    1995 Linear and enhanced transconductance using high-medium-low doping channel Jung-Hui Tsai; Wen-Shiung Lour; Wen-Chau Liu; Lih-Wen Laih; 蔡榮輝

    Showing items 376-400 of 805. (33 Page(s) Totally)
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    View [10|25|50] records per page

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