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    Showing items 251-275 of 805. (33 Page(s) Totally)
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    Date題名Authors
    2009 GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration Jung-Hui Tsai; Shao-Yen Chiu; Kun-Chieh Liang; Tze-Hsuan Huang; Kang-Ping Liu; Hsuan-Wei Huang; Wen-Shiung Lour; 蔡榮輝
    2010 Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels Jung-Hui Tsai; Wen-Shiung Lour; Chia-Hua Huang; Sheng-Shiun Ye; Yung-Chun Ma; 蔡榮輝
    2006-12 A Gate-Recessed InGaN-channel HFET with Improved Carrier Performance Ruey-Lue Wang; Hrong Kuan; Yan-Kuin Su; Chia-Hui Huang; 王瑞祿
    2013-04 A GHz Full-Division-Range Programmable Divider with Output Duty-Cycle Improved Yu-Lung Lo; Jhih-WeiTsai; Han-Ying Liu; Wei-Bin Yang; 羅有龍
    2008 Grating monopole antenna for DVB-T applications Chih-Yu Huang; B. M. Jeng; J. S. Kuo; 黃智裕
    2004-09 Growth-Then-Anodization Technique for Reliable Ultra-Thin Gate Oxides W.J. Liao; Y.L. Yang; S.C. Chuang; J.G. Hwu; 楊宜霖
    1995 Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor Jung-Hui Tsai; Wen-Chau Liu; Wei-Chou Hsu; Lih-Wen Laih; Wen-Shiung Lour; 蔡榮輝
    1997 Heterostructure-Emitter and Pseudomorphic Base Transistor (HEPBT) with a Graded AlxGa1-xAsConfinement Layer Jung-Hui Tsai; Huey-Ing Chen; Wen-Chau Liu; 蔡榮輝
    1999 Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic Quantum-Well Base Jung-Hui Tsai; 蔡榮輝
    2013 Heterostructure-Emitter Bipolar Transistor with InGaP/GaAs Superlattice-Emitter Structure Jung-Hui Tsai; Chung-Cheng Chiang; Yi-Ting Chao; You-Ren Wu; 蔡榮輝
    1999 High Breakdown-Voltage and high-linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels Jung-Hui Tsai; 蔡榮輝
    1996 High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications Jung-Hui Tsai; Wen-Chau Liu; Wen-Shiung Lour; Kun-Wei Lin; Chin-Chuan Cheng,; 蔡榮輝
    2009 High device linearity of pseudomorphic doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate heterostructure Jung-Hui Tsai; Der-Feng Guo; Ning-Xing Su; Yin-Shan Huang; Wen-Chau Liu; 蔡榮輝
    2007 High frequency ratio antenna for RFID tags Chih-Yu Huang; J. S. Kuo; J. J. Wang; 黃智裕
    2004 High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD Jung-Hui Tsai; King-Poul Zhu; Ying-Cheng Chu; Shao-Yen Chiu; 蔡榮輝
    2009 High performance heterostructure transistor with graded-doped sheets Jung-Hui Tsai; Li-Yang Chen; Chien-Chang Huang; Shiou-Ying Cheng; Kun-Wei Lin; Wen-Chau Liu; 蔡榮輝
    2004 High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure Jung-Hui Tsai; King-Poul Zhu; Shao-Yen Chiu; Ying-Cheng Chu; 蔡榮輝
    2003 High performances of InP/InGaAs heterojunction bipolar transistors with a d-doped sheet between two spacer layers Jung-Hui Tsai; 蔡榮輝
    2009 High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2 Jung-Hui Tsai; Shao-Yen Chiu; Hsuan-Wei Huang; Kun-Chieh Liang; Tze-Hsuan Huang; Kang-Ping Liu; Wen-Shiung Lour; 蔡榮輝
    2012-10 A High Sensitivity CMOS Compatible Urea Enzyme Field Effect Transistor without Enzyme Immobilizationer Ruey-Lue Wang; Chen-Fu Lin; Ying-Zong Juang; Hann-Huei Tsai; Hsin-Hao Liao; Ping-Hong Chen; Mei-Jywan Syu; Chien-Cheng Fu; 王瑞祿
    2002 High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations Jung-Hui Tsai; Jung-Hui Tsai; Wen-Lung Chang; Kuo-Hui Yu; Kun-Wei Lin; 蔡榮輝
    1998 High-Gain compact circularly polarised microstrip antenna Chih-Yu Huang; J. Y. Wu; K.L. Wong; 黃智裕
    2013-08 A High-Linearity All-Digital Temperature Sensor With Ring Oscillator Yu-Lung Lo; Yu-Ting Chiu; Wei-Bin Yang; Chao-Chang Chiu; Yu-Lung Lo; 羅有龍
    2000 High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels Jung-Hui Tsai; 蔡榮輝
    2002 High-Linearity InGaP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) with Camel-Gate Structure Jung-Hui Tsai; Jeng-Shyan Chen; 蔡榮輝

    Showing items 251-275 of 805. (33 Page(s) Totally)
    << < 6 7 8 9 10 11 12 13 14 15 > >>
    View [10|25|50] records per page

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