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    高師機構典藏 NKNUIR > 理學院 > 物理學系 > 期刊論文 >  Item 987654321/3438
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/3438

    題名: 具有多重負微分電阻之磷化銦/砷化銦鎵分裂迷你帶結構共振穿透二極體
    Multiple Negative Differential Resistances of InP/InGaAs Resonant Tunneling Diode with Split Miniband Structures
    Authors: 蔡榮輝
    Jung-Hui Tsai
    貢獻者: 物理系
    Keywords: 磷化銦/砷化銦鎵;共振穿透二極體;超晶格;負微分電阻;分?迷你帶
    InP/InGaAs;resonant tunneling diode;superlattice;negative differential resistance;split miniband
    Date: 2006-12
    Issue Date: 2010-07-08 15:04:31 (UTC+8)
    Abstract: 本論文主要論述一種具有四週期超晶格結構之磷化銦/砷化銦鎵p-n接面共振穿透二極體的連續穿透特性。為獲得更多軌跡的負微分電阻,本研究元件使用了相當薄之砷化銦鎵量子井,可使四週期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分裂的量子化能階,且於足夠大的操作偏壓下在該超晶格結構中形成了高場區域。實驗的結果顯示,由於此分裂迷你帶結構及超晶格結構中高場區域的擴展,於常溫下可觀察出六道軌跡之多重負微分電阻特性。因此,本研究元件極適合於多值邏輯電路應用。
    Sequential tunneling behavior in an InP/InGaAs p-n resonant tunneling diode with four-period superlattice is demonstrated. For the requirement of more negative differential resistance (NDR) routes, three split quantized energies are formed in the four-period InP/InGaAs superlattice structure with relatively thin InGaAs quantum wells under ideal flat-band condition, and high-field domain in the superlattice is formed under sufficiently large operation bias. Experimentally, an interesting six-route NDR characteristic, resulting from the form of split miniband structures and the extension of high-field domain in the superlattice, is observed at room temperature. Consequently, the studied device shows a good potential for multiple-valued logic circuit applications.
    關聯: 高雄師大學報 / 21期_3, 頁55-66
    期刊編號 10214542(974)
    Appears in Collections:[物理學系] 期刊論文
    [高雄師大學報] 第21期
    [電子系] 蔡榮輝

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