首先，我們研究三重通道總厚度相同之擬晶性摻雜式通道場效電晶體，包含：GaAs/In0.1Ga0.9As/In0.2Ga0.8As (A元件)，In0.2Ga0.8As/In0.1Ga0.9As/GaAs (B元件)及In0.1Ga0.9As (C元件)等三個摻雜通道元件，由於其具有高閘極能障和良好的載子侷限性，結果顯示各元件皆具不同特色。就A元件而言，雖然B元件InGaP/In0.2Ga0.8As異質接面的導帶不連續值 (ΔEc) 高於A元件的InGaP/GaAs異質接面，但若將A元件三界面的導帶差加總起來仍是很大的。模擬結果得知，A元件的特性佳，其閘極導通電壓為0.9887V、崩潰電壓為-10.51V，且臨界電壓為 -0.9V。B元件則展現了最大的飽和電流為52.9674 mA，並有最大轉導值303.067 mS/mm。然而，在三者之中，C元件有最好的微波特性，其震盪頻率為82.05 GHz。
第二，我們研究三種通道厚度皆相同的擬晶性摻雜式通道場效電晶體，包含：InGaP/In0.1Ga0.9As (C元件), InGaP/GaAs (D元件), 及InGaP/In0.2Ga0.8As (E元件)。由於在E元件的InGaP/In0.2Ga0.8As界面有最高的位障，並有最佳的通道載子侷限能力，因此，E元件展現了最佳的性能，其最大的汲極電流53.6875 mA，最大的轉導值294.576 mS/mm。對比於另兩者，E元件亦有較佳的微波特性。
In this dissertation, two sets of InGaP/InGaAs pseudomorphic doping-channel field-effect transistors (DCFETs), doped by various In mole fraction in InGaAs channel, were analyzed and discussed. Through the different arrangement of channels, the device characteristics including the energy band diagrams, distribution of carrier, DC and microwave performance are investigated. Simultaneously, each of the studied devices show different device characteristics. We will study and make some inclusions at the end of this thesis. However, all the devices exhibit some good characteristics, such as high turn-on voltage, low leakage current, high current density, large swing, and high as well as linear transconductance. The studied devices show a great promise for high-speed, and high-frequency applications.
First, three kinds of DCFETs, including GaAs/In0.1Ga0.9As/In0.2Ga0.8As (device A), In0.2Ga0.8As/In0.1Ga0.9As/GaAs (device B), and In0.1Ga0.9As (device C) doping channels, are studied as the total thickness of multiple channels is fixed at constant. Due to the high barrier and good carrier confinement, the device B shows a maximum drain saturation current of 52.9674 mA and a maximum transconductance value of 303.067 mS/mm. Compared with device A, though the conduction band discontinuity (ΔEc) at InGaP/In0.2Ga0.8As heterojunction in the device B is larger than that at InGaP/GaAs junction in the device A, the confinement effect for channel electrons in the device A is still good attributed to the sum of ΔEc values at three triple junctions. Moreover, in device A, a gate turn-on voltage of 0.9887V, a breakdown voltages of -10.51V, and a threshold voltages of -0.9V are obtained at equilibrium. However, the device C shows the best microwave characteristic among of the three devices. Second, the characteristics of InGaP/In0.1Ga0.9As (device C), InGaP/GaAs (device D), and InGaP/In0.2Ga0.8As (device E) DCFETs are discussed. Three kinds of DCFETs are studied as the thickness of channels is the same. Due to the highest barrier heights of the InGaP/In0.2Ga0.8As discontinuities and the best channel carrier confinement capability, the device E shows the best properties, including a maximum drain saturation current of 53.6875 mA, a maximum transconductance value of 294.576 mS/mm, and the good microwave properties in the three devices. Finally, we will make some conclusions to clarify the differences between these devices.