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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/26046

    題名: 通道分佈對於磷化銦鎵/砷化銦鎵擬晶性摻雜通道場效電晶體之研究
    Investigation of channel profile on the performance of InGaP/InGaAs pseudomorphic doping-channel field-effect transistors
    Authors: 趙怡婷
    Yi-Ting Chao
    貢獻者: 蔡榮輝
    Jung-Hui Tsai
    Keywords: 磷化銦鎵/砷化銦鎵;道分佈;摻雜通道;場效電晶體
    InGaP/InGaAs;channel profile;doping-channel;field-effect transistor
    Date: 2014-12-08
    Issue Date: 2016-03-10 16:29:37 (UTC+8)
    Abstract: 在本論文中,我們將兩系列不同的磷化銦鎵/砷化銦鎵(InGaP/InGaAs)擬晶性摻雜式通道場效電晶體進行系統化的研究與探討,其中在砷化銦鎵通道摻雜不同的銦莫耳數並做不同的排列組合,做為調變元件性能的主要因素。我們將經由不同的排列組合,對元件特性做詳細的研究,包含能帶圖、載子分佈圖、直流及微波特性曲線圖等。從模擬結果得知,每一個元件皆有不同特性,而我們將在最後做出總結。然而,每個元件都包括優越的特性,像是高導通電壓、低漏電流、高電流密度、大擺幅、良好的線性轉導等,這些優點都使本研究元件適合用在高速和高頻應用。
    首先,我們研究三重通道總厚度相同之擬晶性摻雜式通道場效電晶體,包含:GaAs/In0.1Ga0.9As/In0.2Ga0.8As (A元件),In0.2Ga0.8As/In0.1Ga0.9As/GaAs (B元件)及In0.1Ga0.9As (C元件)等三個摻雜通道元件,由於其具有高閘極能障和良好的載子侷限性,結果顯示各元件皆具不同特色。就A元件而言,雖然B元件InGaP/In0.2Ga0.8As異質接面的導帶不連續值 (ΔEc) 高於A元件的InGaP/GaAs異質接面,但若將A元件三界面的導帶差加總起來仍是很大的。模擬結果得知,A元件的特性佳,其閘極導通電壓為0.9887V、崩潰電壓為-10.51V,且臨界電壓為 -0.9V。B元件則展現了最大的飽和電流為52.9674 mA,並有最大轉導值303.067 mS/mm。然而,在三者之中,C元件有最好的微波特性,其震盪頻率為82.05 GHz。
    第二,我們研究三種通道厚度皆相同的擬晶性摻雜式通道場效電晶體,包含:InGaP/In0.1Ga0.9As (C元件), InGaP/GaAs (D元件), 及InGaP/In0.2Ga0.8As (E元件)。由於在E元件的InGaP/In0.2Ga0.8As界面有最高的位障,並有最佳的通道載子侷限能力,因此,E元件展現了最佳的性能,其最大的汲極電流53.6875 mA,最大的轉導值294.576 mS/mm。對比於另兩者,E元件亦有較佳的微波特性。
    In this dissertation, two sets of InGaP/InGaAs pseudomorphic doping-channel field-effect transistors (DCFETs), doped by various In mole fraction in InGaAs channel, were analyzed and discussed. Through the different arrangement of channels, the device characteristics including the energy band diagrams, distribution of carrier, DC and microwave performance are investigated. Simultaneously, each of the studied devices show different device characteristics. We will study and make some inclusions at the end of this thesis. However, all the devices exhibit some good characteristics, such as high turn-on voltage, low leakage current, high current density, large swing, and high as well as linear transconductance. The studied devices show a great promise for high-speed, and high-frequency applications.
    First, three kinds of DCFETs, including GaAs/In0.1Ga0.9As/In0.2Ga0.8As (device A), In0.2Ga0.8As/In0.1Ga0.9As/GaAs (device B), and In0.1Ga0.9As (device C) doping channels, are studied as the total thickness of multiple channels is fixed at constant. Due to the high barrier and good carrier confinement, the device B shows a maximum drain saturation current of 52.9674 mA and a maximum transconductance value of 303.067 mS/mm. Compared with device A, though the conduction band discontinuity (ΔEc) at InGaP/In0.2Ga0.8As heterojunction in the device B is larger than that at InGaP/GaAs junction in the device A, the confinement effect for channel electrons in the device A is still good attributed to the sum of ΔEc values at three triple junctions. Moreover, in device A, a gate turn-on voltage of 0.9887V, a breakdown voltages of -10.51V, and a threshold voltages of -0.9V are obtained at equilibrium. However, the device C shows the best microwave characteristic among of the three devices. Second, the characteristics of InGaP/In0.1Ga0.9As (device C), InGaP/GaAs (device D), and InGaP/In0.2Ga0.8As (device E) DCFETs are discussed. Three kinds of DCFETs are studied as the thickness of channels is the same. Due to the highest barrier heights of the InGaP/In0.2Ga0.8As discontinuities and the best channel carrier confinement capability, the device E shows the best properties, including a maximum drain saturation current of 53.6875 mA, a maximum transconductance value of 294.576 mS/mm, and the good microwave properties in the three devices. Finally, we will make some conclusions to clarify the differences between these devices.
    Appears in Collections:[電子工程學系] 博碩士論文
    [電子系] 蔡榮輝

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