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    高師機構典藏 NKNUIR > 理學院 > 化學系 > 期刊論文 >  Item 987654321/23992
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/23992

    題名: Origin of Hopping Conduction in Graphene Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
    Authors: 陳榮輝
    Rong-Huei Chen;Kuan-Chang Chang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Jen-Chung Lou;Tai-Fa Young;Min-Chen Chen;Ya-Liang Yang;Yin-Chih Pan;Geng-Wei Chang;Tian-Jian Chu;Chih-Cheng Shih;Jian-Yu Chen;Chih-Hung Pan;Yu-Ting Su;Yong-En Syu;Ya-Hsiang Tai;Simon M. Sze
    貢獻者: 化學系
    Date: 2013-05
    Issue Date: 2015-05-12 16:50:19 (UTC+8)
    Abstract: In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C:SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
    關聯: Electron Device Letters / 34(5), 677-679. ( SCI, 23 / 244 = 9%, Electrical & Electronic Engineering ), doi: 10.1109/LED.2013.2250899
    Appears in Collections:[化學系] 期刊論文
    [化學系] 陳榮輝

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