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    高師機構典藏 NKNUIR > 理學院 > 化學系 > 期刊論文 >  Item 987654321/23987
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/23987

    題名: Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
    Authors: 陳榮輝
    Rong-Huei Chen;Yong-En Syu;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Kuan-Chang Chang;Jen-Chung Lou;Tai-Fa Young;Min-Chen Chen;Ya-Liang Yang;Chih-Cheng Shih;Tian-Jian Chu;Jian-Yu Chen;Chih-Hung Pan;Yu-Ting Su;Hui-Chun Huang;Der-Shin Gan;Simon M. Sze
    貢獻者: 化學系
    Keywords: Nonvolatile memory;resistance switching;tungsten silicon oxide $({rm WSiO}_{bf x})$
    Date: 2013-07
    Issue Date: 2015-05-12 16:50:14 (UTC+8)
    Abstract: Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
    關聯: Electron Device Letters / 34(7), 864-866.(SCI, 23 / 244 = 9%, Electrical & Electronic Engineering)
    Appears in Collections:[化學系] 陳榮輝
    [化學系] 期刊論文

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