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    高師機構典藏 NKNUIR > 理學院 > 化學系 > 期刊論文 >  Item 987654321/23982
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/23982


    題名: High performance of graphene oxide-doped silicon oxide-based resistance random access memory
    Authors: 陳榮輝
    Rong-Huei Chen;Rui Zhang;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Kai-Huang Chen;Jen-Chung Lou;Tai-Fa Young;Chih-Cheng Shih;Ya-Liang Yang;Yin-Chih Pan;Tian-Jian Chu;Syuan-Yong Huang;Chih-Hung Pan;Yu-Ting Su;Yong-En Syu;Simon M Sze
    貢獻者: 化學系
    Keywords: High performance;Graphene oxide;RRAM;Hopping conduction
    Date: 2013-11-21
    Issue Date: 2015-05-12 16:50:09 (UTC+8)
    Abstract: In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
    關聯: Nanoscale Research Letters / November 2013, 8:497
    Appears in Collections:[化學系] 期刊論文
    [化學系] 陳榮輝

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