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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22386

    題名: InGaP/GaAs pnp heterojunction bipolar transistor with d-doped sheet between base-emitter junction
    Authors: Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Chien-Ming L;Yi-Zhen Wu;Ning-Xing Su;Yin-Shan Huang
    Date: 2008
    Issue Date: 2014-12-09 10:13:27 (UTC+8)
    關聯: International conference on multi-functional materials and structures, Vol.47-50, pp. 383-386, Hong Kong, 2008. [EI]
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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