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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22380

    題名: High device linearity of pseudomorphic doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate heterostructure
    Authors: Jung-Hui Tsai;Der-Feng Guo;Ning-Xing Su;Yin-Shan Huang;Wen-Chau Liu
    Date: 2009
    Issue Date: 2014-12-09 10:13:19 (UTC+8)
    關聯: The International Conference on Nanophotonics 2009, p.179, Harbin, China, 2009
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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