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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22367


    題名: Application of p+-InGaP/n+-GaAs/i-InGaAs Camel-Like Gate for Delta-Doped p-Channel Field-Effect Transistor
    Authors: Jung-Hui Tsai;Yi-Ting Chao;Chung-Cheng Chiang;You-Ren Wu;Ning-Feng Dale;Yuan-Hong Lee
    蔡榮輝
    Date: 2013
    Issue Date: 2014-12-09 10:13:01 (UTC+8)
    關聯: The 13th International Workshop on Junction Technology (IWJT), pp.11-13, Kyoto, Japan, 2013. [EI]
    Appears in Collections:[電子工程學系] 會議論文
    [電子系] 蔡榮輝

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