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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22328


    題名: Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor
    Authors: Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu
    蔡榮輝
    Date: 2001
    Issue Date: 2014-11-24 10:25:34 (UTC+8)
    關聯: Jpn. J. Appl. Phys., Vol. 40, No. 1, pp.24 -27, 2001.
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 蔡榮輝

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