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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/22237

    題名: 砷化鎵系之HEMT/HBT微波元件與電路製程之研究---總計畫(II)
    The Study of Fabrication Process of GaAs-Based HEMT/HBT Microwave Devices and Circuits (II)
    Authors: 王瑞祿;蘇炎坤;王永和
    Ruey-Lue Wang
    Date: 1999-08
    Issue Date: 2014-11-20 11:56:48 (UTC+8)
    Abstract: 應用研究, 研究期間 8808~8909, 研究經費4287千元
    關聯: 行政院國家科學委員會計畫 / 計畫編號 NSC89-2219-E006-011
    Appears in Collections:[電子工程學系] 研究計畫
    [電子系] 王瑞祿

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