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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/21929

    題名: The Breakdown Properties of Front- and Back-side Post Oxidation Annealed( POA ) Ultrathin Gate Oxide ( <3nm ) under High Field Stress
    Authors: Chia-Hong Huang;Jenn-Gwo Hwu
    Date: 1999
    Issue Date: 2014-11-06 11:07:43 (UTC+8)
    關聯: in proceeding of EDMS, 1999, p. 527
    Appears in Collections:[電子系] 黃嘉宏
    [電子工程學系] 會議論文

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