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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/21927


    題名: Role of Interface Trap Generation in the Low-Voltage Tunneling Current ( LVTC ) Characteristics of Ultra-Thin Gate Oxide ( ~2nm ) under High Field Stress
    Authors: Chia-Hong Huang;Jenn-Gwo Hwu
    黃嘉宏
    Date: 2000
    Issue Date: 2014-11-06 11:07:41 (UTC+8)
    關聯: in proceeding A,D of IEDMS,2000, p. 90
    Appears in Collections:[電子系] 黃嘉宏
    [電子工程學系] 會議論文

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