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    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/21920

    題名: Breakdown Characteristics of Ultra-thin Gate Oxide ( < 4nm ) in MOS Structure Subjected Substrate Injection
    Authors: Chia-Hong Huang;Jenn-Gwo Hwu
    Date: 2001
    Issue Date: 2014-11-03 16:29:24 (UTC+8)
    關聯: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 5, p. 1894-1897, 2001. (SCI)
    Appears in Collections:[電子工程學系] 期刊論文
    [電子系] 黃嘉宏

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