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    高師機構典藏 NKNUIR > 理學院 > 物理學系 > 期刊論文 >  Item 987654321/10521
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/10521

    題名: Carrier relaxation in multi-stacked InAs/GaAs quantum dots
    Authors: 李孟恩
    D. J. Jang;S. K. Lu;Meng-En Lee;C. M. Lai;J. S. Wang;K. Y. Hsie
    貢獻者: 物理系
    Date: 2005-03
    Issue Date: 2010-11-11 09:05:52 (UTC+8)
    Abstract: We report the ultrafast time-resolved photoluminescence study of multi-stacked InAs/GaAs quantum dots (MSQD) using the photoluminescence upconversion technique. MSQD with thicknesses of GaAs spacer of 30, 15, and 10 nm were studied to elucidate the dynamics of carrier coupling in both growth and lateral directions. The PL decay time decreases with the thickness of the GaAs spacer. The PL exhibits fast decay as the energy increases. We attribute the energy dependence of PL decay time to carrier tunneling in growth direction. We also found that the carrier tunneling is less effective for GaAs spacer of thickness 30 nm.
    關聯: American Physical Society, APS March Meeting, March 21-25, 2005, abstract #P19.007
    Appears in Collections:[物理學系] 期刊論文
    [物理系] 李孟恩

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