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    高師機構典藏 NKNUIR > 理學院 > 物理學系 > 期刊論文 >  Item 987654321/10520
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/10520


    題名: Carrier dynamics and intervalley scattering in InN
    Authors: 李孟恩
    D. Jang;G. Lin;Meng-En Lee
    貢獻者: 物理系
    Keywords: Intervalley scattering;InN;Time-resolved photoluminescence;Carrier relaxation;Hot carrier;Electron–phonon interaction
    Date: 2009
    Issue Date: 2010-11-11 09:05:52 (UTC+8)
    Abstract: The carrier cooling and the carrier relaxation of an InN thin film illuminated with two excitation energies of 1.53 and 3.06 eV were studied by an ultrafast time-resolved photoluminescence upconversion apparatus. The hot phonon effect could be accounted for longer effective phonon emission times as compared to the theoretical prediction. The rise time and the LO phonon emission time for 3.06 eV excitation were much smaller than those for 1.53 eV excitation. These differences were attributed to the intervalley scattering between the Γ1 and Γ3 valleys in InN when carriers were excited with the energy of 3.06 eV. The intervalley scattering times of 250 fs and 2 ps were estimated for the intervalley scattering from the Γ1 to Γ3 valley and the reversed scattering process, respectively.
    關聯: Optical Materials / Volume 31, Issue 12, P.1857–1859
    Appears in Collections:[物理學系] 期刊論文
    [物理系] 李孟恩

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