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    高師機構典藏 NKNUIR > 理學院 > 物理學系 > 期刊論文 >  Item 987654321/10519
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/10519


    題名: Carrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer–Weber and Stranski–Krastanow growth modes
    Authors: 李孟恩
    Meng-En Lee;Y. C.Yeh;Y. H. Chung;C. L. Wu;C. S. Yang
    貢獻者: 物理系
    Keywords: Type II quantum dots;Time-resolved photoluminescence;Carrier capture;Carrier relaxation;Auger process
    Date: 2005-02
    Issue Date: 2010-11-11 09:05:52 (UTC+8)
    Abstract: The carrier capture and relaxation of type II ZnTe/ZnSe quantum dots have been investigated with ultrafast time-resolved photoluminescence upconversion. The carrier capture times were 7 and 38 ps for the Volmer–Weber mode and Stranski–Krastanow mode, respectively. We found that the carrier relaxation of QDs exhibits faster decay under the Volmer–Weber growth mode than under the Stranski–Krastanow growth mode. We attribute the difference of carrier relaxation to the wetting layer formed in the Stranski–Krastanow growth mode.
    關聯: Physica E: Low-dimensional Systems and Nanostructures / Volume 26, Issues 1–4, P.422–426
    Appears in Collections:[物理學系] 期刊論文
    [物理系] 李孟恩

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