English  |  正體中文  |  简体中文  |  Items with full text/Total items : 16335/24215 (67%)
Visitors : 13472316      Online Users : 89
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    高師機構典藏 NKNUIR > 理學院 > 物理學系 > 期刊論文 >  Item 987654321/10519
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/10519

    題名: Carrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer–Weber and Stranski–Krastanow growth modes
    Authors: 李孟恩
    Meng-En Lee;Y. C.Yeh;Y. H. Chung;C. L. Wu;C. S. Yang
    貢獻者: 物理系
    Keywords: Type II quantum dots;Time-resolved photoluminescence;Carrier capture;Carrier relaxation;Auger process
    Date: 2005-02
    Issue Date: 2010-11-11 09:05:52 (UTC+8)
    Abstract: The carrier capture and relaxation of type II ZnTe/ZnSe quantum dots have been investigated with ultrafast time-resolved photoluminescence upconversion. The carrier capture times were 7 and 38 ps for the Volmer–Weber mode and Stranski–Krastanow mode, respectively. We found that the carrier relaxation of QDs exhibits faster decay under the Volmer–Weber growth mode than under the Stranski–Krastanow growth mode. We attribute the difference of carrier relaxation to the wetting layer formed in the Stranski–Krastanow growth mode.
    關聯: Physica E: Low-dimensional Systems and Nanostructures / Volume 26, Issues 1–4, P.422–426
    Appears in Collections:[物理學系] 期刊論文
    [物理系] 李孟恩

    Files in This Item:

    File SizeFormat

    All items in NKNUIR are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback