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    高師機構典藏 NKNUIR > 理學院 > 物理學系 > 期刊論文 >  Item 987654321/10515
    Please use this identifier to cite or link to this item: http://ir.nknu.edu.tw/ir/handle/987654321/10515


    題名: Auger recombination in InN thin films
    Authors: 李孟恩
    D. J. Jang;G. T. Lin;C. L. Hsiao;L. W. Tu;Meng-En Lee
    貢獻者: 物理系
    Date: 2008
    Issue Date: 2010-11-11 09:05:49 (UTC+8)
    Abstract: Auger recombination is studied in InN thin films using an ultrafast time-resolvedphotoluminescence apparatus. The decay rates are analyzed with nonlinear dependence of the photoluminescence intensity on the carrier concentration. The fitted radiative recombination coefficients at a temperature of 35K are consistent with the theoretical prediction. The Auger rates are small at low carrier concentrations but increase quadratically with the carrier concentration. The Auger activation energies of 4.3 and 9.0meV obtained from the temperature-dependent Auger coefficient indicate that Auger recombination is weakly dependent on temperature and is a phonon-assisted process.
    關聯: Appl. Phys. Lett. 92, 042101 (2008)
    Appears in Collections:[物理學系] 期刊論文
    [物理系] 李孟恩

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